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rev. 1.5 april 2012 www.aosmd.com page 1 of 16 AOZ5006 35a drmos power module general description the AOZ5006 is a high efficiency synchronous buck power stage module consisting of two asymmetrical mosfets and an integrated driver. the mosfets are individually optimized for operation in the synchronous buck configuration. the high side mosfet has low capacitance and gate charge for fast switching with low duty cycle operation. the low side mosfet has ultra low r ds(on) to minimize conduction losses. the AOZ5006 is available with two pwm options. AOZ5006qi is intended for use with ttl compatible pwm inputs. AOZ5006qi-01 has lower thresholds on the pwm signal and can operate with 3v inputs. all other parameters are identical for the two versions. both versions are tri-state compatible that allows both power mosfets to be turned off. a number of features are provided making the AOZ5006 a highly versatile power module. the boot supply diode is integrated in the driver. the low side mosfet can be driven into diode emulation mode to provide asynchronous operation when required. the pinout is optimized for low inductance routing of the converter keeping the parasitics and their effects to the minimum. features ? fully complies with intel dr mos rev 4.0 specifications ? 4.5v to 16v input voltage range ? 4.5v to 5.5v driver supply range ? up to 35a output current ? up to 1 mhz pwm operation ? tri state pwm input ? undervoltage protection ? integrated boot supply diode ? diode emulation mode of operation ? thermal shutdown alarm with flag ? small 6x6 qfn-40l package applications ? servers ? vrms for motherboards ? point of load dc/dc converters ? memory and graphic cards ? video gaming consoles typical application circuit +5v cgnd vout pgnd vin 12v vdrv vcin pwm smod disb# thdn boot vin cboot lout cin cout pgnd cgnd vswh AOZ5006 pwm controller drive logic and dead time control
AOZ5006 rev. 1.5 april 2012 www.aosmd.com page 2 of 16 ordering information aos green products use reduced levels of halogens, and are also rohs compliant. please visit www.aosmd.com/web/quality/rohs_compliant.jsp for additional information. pin configuration part number ambient temperature range package environmental AOZ5006qi -40c to +85c 6x6 qfn-40l green product AOZ5006qi-01 vin vin vin vin vswh pgnd pgnd pgnd pgnd pgnd pwm disb# thdn cgnd gl vswh vswh vswh vswh vswh pgnd pgnd pgnd pgnd pgnd pgnd pgnd pgnd vswh vswh vin vin vin vswh gh cgnd boot vdrv vcin smod 6x6 qfn-40 (top view) 11 hs fet driver 20 21 30 31 40 1 10 ls fet
AOZ5006 rev. 1.5 april 2012 www.aosmd.com page 3 of 16 pin description functional block diagram pin number pin name pin function 1 smod skip mode input. when the pin is held active low, diode emulation or skip mode is enabled for the ls fet. 2 vcin control supply input. nominal 5v. can be derived from the gate drive supply vdrv with an rc filter for noise bypass. 3 vdrv gate drive supply input. nominal 5v. 4 boot gate drive supply for the hs fet. nominal 5v. the bootstrap diode is internal to the module. connect a 0.1 ? f or higher ceramic capacitor between vswh node at pin 7. 5, 37 cgnd control or analog ground for return of control signals and bypass capacitors. attached to exposed pad in the driver section. 6 gh gate of the hs fet. used for module test ing during production. no user connections. 7 vswh switching or the phase node for bootstrap capacitor connection. 8 to 14 vin power input to the switching mosfets. attached to the hs fet drain tab. 15 vswh switching or the phase node pin. not for power connections. 16 to 28 pgnd power ground. internally connected to control gnd of pin 37. 29 to 35 vswh switching or phase node connected to sour ce of high side mosfet and drain of the low side mosfet. electrically attached to the ls fet drain tab. 36 gl gate of the ls fet. used for module test ing during production. no user connections. 38 thdn open drain output of the th ermal shutdown circuit. active low. 39 disb# disable pin for the controller. both gates are held active low when disb# is grounded. 40 pwm pulse width modulated tri state input from external controller. vdrv boot vin vswh pgnd vcin pwm disb# smod thdn vdrv cgnd temp shdn vcin uvlo complementary control logic shoot through control
AOZ5006 rev. 1.5 april 2012 www.aosmd.com page 4 of 16 absolute maximum ratings exceeding the absolute maximum ratings may damage the device. notes: 1. peak voltages can be applied for 100 ns per switching cycle. 2. devices are inherently esd sens itive, handling precautions are required. human body model rating: 1.5 k ? in series with 100 pf. recommended operating conditions the device is not guaranteed to operate beyond the maximum recommended operating conditions. electrical characteristics (3) t a = 25c, v in = 12v, vdrv = vcin = 5v unless otherwise specified. parameter rating supply voltage (vin) -0.3v to 25v switch node voltage (vswh) (1) -8v to 25v bootstrap voltage (vboot) -0.3v to 25v vboot voltage transient (1) 36v supply and gate drive voltages {vcin, vdrv, (vboot ? vswh)} -0.3v to 7v control inputs (pwm, smod, disb#) -0.3v to vcin + 0.3 v storage temperature (t s ) -40c to +150c junction temperature (t j ) -40c to +150c esd rating (2) 2 kv parameter rating supply voltage (vin) 4.5v to 16v supply and gate drive voltages {vcin, vdrv, (vboot ? vswh)} 4.5v to 5.5v control inputs (pwm, smod, disb#) 0v to vcin ? 0.3v operating frequency 200 khz to 1 mhz symbol parameter conditions min. typ. max. units vin operating voltage 4.5 16 v vcin vdrv tied to vcin 4.5 5.5 v r ? jc (4) thermal resistance pcb temp = 100c 5.0 c / w r ? ja (4) 50 c / w input supply and uvlo v cinon undervoltage lockout v cin rising 3.5 3.9 v v cinhyst v cin falling 550 mv i vcin control circuit bias current disb# = 0, vcin = 5v 50 75 ? a disb# = high, v pwm = open 350 500 ? a disb# = high, v pwm = 0v 650 ? a i vdrv drive circuit operating current disb# = high, v pwm = 300 khz @ 50% 16 ma disb# = high, v pwm = 1 mhz @ 50% 48 ma pwm input (AOZ5006qi) v pwmh pwm input high threshold v pwm rising, vcin = 5v 3.6 3.9 4.1 v v pwml pwm input low threshold v pwm falling, vcin = 5v 0.8 1.0 1.2 v i pwm pwm pin input current source or sink, v pwm = 0v to 5v 250 ? a v trih pwm input tri state threshold v pwm rising, vcin = 5v 1.0 1.3 1.6 v v tril v pwm falling, vcin = 5v 3.4 3.7 4.0 v v trrh tri state threshold hysteresis v pwm rising, vcin = 5v 280 mv v trfh v pwm falling, vcin = 5v 170 mv
AOZ5006 rev. 1.5 april 2012 www.aosmd.com page 5 of 16 notes: 3. all voltages are specified with respect to the corresponding gnd pin 4. characterisation value. not tested in production. 5. temperature sensed on the driver pad 6. values given for reference only. pwm input (AOZ5006qi-01) v pwmh pwm input high threshold v pwm rising, vcin = 5v 1.8 2.0 2.2 v v pwml pwm input low threshold v pwm falling, vcin = 5v 0.8 1.0 1.2 v i pwm pwm pin input current source or sink, v pwm = 0v to 3v 10 ? a v trih pwm input tri state threshold v pwm rising, vcin = 5v 1.0 1.3 1.6 v v tril v pwm falling, vcin = 5v 1.5 1.75 2.0 v v trrh tri state threshold hysteresis v pwm rising, vcin = 5v 300 mv v trfh v pwm falling, vcin = 5v 300 mv disb# input v disbon outputs enable threshold vcin = 5v 2.0 v v disboff outputs disable threshold vcin = 5v 0.8 v i disb disb# pin input current source or sink 10 ? a smod input v smodh smod enable threshold vcin = 5v 2.0 v v smodl smod disable threshold vcin = 5v 0.8 v i smod smod pin input current source or sink 10 ? a gate driver timings t pdlu pwm to hs gate pwm h ? l, gh h ? l20ns t pdll pwm to ls gate pwm l ? h, gl h ? l35ns t pdhu ls to hs gate deadtime gl h ? l, gh l ? h16ns t pdhl hs to ls gate deadtime gh h ? l, gl l ? h17ns t tsshd tri state shutdown delay 170 ns t pts tri state propagation delay 35 ns thermal shutdown (5) t jthdn shutdown threshold 150 c t jhyst hysteresis 15 c v thdnl thdn pin output low 5 k ? pull up resistor to vcin 0.06 v r thdnl thdn pull down resistance 60 ? mosfet ratings (6) v ds voltage rating 25 v r dshs drain source on resistance high side mosfet 6 m ? r dsls low side mosfet 1.6 m ? symbol parameter conditions min. typ. max. units electrical characteristics (3) (continued) t a = 25c, v in = 12v, vdrv = vcin = 5v unless otherwise specified.
AOZ5006 rev. 1.5 april 2012 www.aosmd.com page 6 of 16 typical performance characteristics unless otherwise noted, vin = 12v, vdrv = vcin = 5v, f sw = 600 khz, l out = 470 nh, v out = 1.2v. loss and efficiency measured on aos evaluation board at t a = 25c. no forced air for module loss < 7w. module loss includes power mosfet loss plus drive circuit loss. power train consists of AOZ5006 power module plus output inductor ihlp6767gzerr47m01. power train efficiency does not include other losses in the test board. fig 1. module loss vs. load current fig 2. power train efficiency vs. load current fig 3. normalised module loss and efficiency vs. output voltage fig 4. normalised module loss and efficiency vs. input voltage 0 1 2 3 4 5 6 7 8 0 3 6 9 12 15 18 21 24 27 30 33 36 load current (amps) load current (amps) loss (watts) 75% 80% 85% 90% 95% 0 3 6 9 12 15 18 21 24 27 30 33 36 0.96 0.98 1.00 1.02 1.04 1.06 1.08 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 input voltage efficiency (normalised) 0.95 1.00 1.05 1.10 1.15 1.20 1.25 loss (normalised) output voltage efficiency (normalised) loss (normalised) 0.980 0.985 0.990 0.995 1.000 1.005 1.010 4 5 6 7 8 9 10 11 12 13 14 15 16 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1 mhz 600 khz 300 khz 1 mhz 600 khz 300 khz efficiency loss efficiency loss
rev. 1.5 april 2012 www.aosmd.com page 7 of 16 AOZ5006 typical performance characteristics (continued) fig 5. normalised module loss and power train efficiency vs. drive voltage fig 6. i drv + i vcin vs. drive voltage fig 7. normalised i drv + i vcin vs. operating frequency fig 8. i drv + i vcin vs. temperature fig 9. vdrv uvlo threshold vs. temperature fig 10. pwm input threshold vs. temperature 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 1.04 1.05 4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 6 drive voltage normalised loss and efficiency loss efficiency 30 31 32 33 34 35 36 37 38 39 40 4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 6 drive voltage driver current idrv + ivcin (ma) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 300 600 1000 operating frequency (khz) normalised driver current (ma) 0.990 0.995 1.000 1.005 1.010 1.015 1.020 1.025 1.030 1.035 -40 -25 0 25 50 85 100 125 temperature (c) temperature (c) temperature (c) normalised driver current (ma) 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 -40 -25 0 25 50 85 100 125 vcin threshold (volts) 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 -40 -25 0 25 50 85 100 125 pwm threshold (volts) vcin rising threshold vcin falling threshold pwm rising threshold pwm falling threshold
rev. 1.5 april 2012 www.aosmd.com page 8 of 16 AOZ5006 typical performance characteristics (continued) fig 11. pwm input tristate threshold vs. temperature fig 12. pwm input tri state hold off time vs. temperature fig 13. disb# input threshold vs. temperature fig 14. smod input threshold vs. temperature temperature (c) temperature (c) temperature (c) temperature (c) 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 -40 -25 0 25 50 85 100 125 tri state threshold (volts) 100 120 140 160 180 200 220 240 -40 -25 0 25 50 85 100 125 tri state hold off time (ns) 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 -40 -25 0 25 50 85 100 125 disb# thresholds (volts) 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 -40 -25 0 25 50 85 100 125 smod thresholds (volts) tri state rising threshold tri state falling threshold smod rising threshold smod falling threshold disb# rising threshold disb# falling threshold
rev. 1.5 april 2012 www.aosmd.com page 9 of 16 AOZ5006 timing diagram figure 15. timing diagram application information AOZ5006qi and AOZ5006qi-01 are fully integrated power modules designed to work over an input voltage range of 4.5v to 16v with 5v supplies for gate drive and internal control circuits. a number of features are provided making the AOZ5006qi a highly versatile power module. high side and low side power mosfets are combined in one package with the pin outs optimized for power routing with minimum parasitic inductances. the mosfets are individually tailored for efficient operation as either high side or low side switches in a low duty cycle synchronous buck converte r. a high current driver is also included in the package which minimizes the gate drive loop and results in extremely fast switching. the modules are fully compatible with intel drmos specification rev 4.0 in form fit and function. powering the module and the gate drives an external supply vdrv of 5v is required for driving the mosfets. the mosfets are designed with low gate thresholds so that lower drive voltage can be used to reduce the switching and drive losses without compromising the conduction losses. the control logic supply vcin can be derived from the gate drive supply vdrv through an rc filter to bypass the switching noise. see figure 16 for recommended gate drive supply connections. the gate driver is capable of supplying several amperes of peak current into the ls fet to achieve extremely fast switching. a ceramic bypass capacitor of 1 ? f or higher is recommended from vdrv to cgnd. the boost supply for driving the high side mosfet is generated by connecting a small capacitor between boot pin and the switching node vswh. it is recommended that this capacitor cboot be connected as close as possible to the devi ce across pins 4 and 7. boost diode is integrated into the package. rboot is an optional resistor used by designers to slow down the turn on speed of the high side mosfet. the value is a compromise between the need to keep both the switching time and vswh node spikes as low as possible and is typically 1 ? to 5 ?? undervoltage lockout and enable vcin is monitored for uvlo conditions and both outputs are actively held low unless adequate gate supply is available. the undervoltage lockout is set at 3.5v with a 550 mv hysteresis. since the pwm control signals are provided typically from an external controller or a digital processor extra care must be taken during start up. the AOZ5006qi must be powered up and enabled before the pwm input is applied. it should be ensured that pwm signal goes through a proper soft start sequence to minimise inrush current in the converter during start up. powering the module with a full duty cycle pwm signal already applied may lead to a number of undesirable consequences as explained below. outputs can also be turned off through the disb# pin. when this input is grounded the drivers are disabled and held active low. the module is in standby mode with low quiescent current of less than 75 ? a. pwm gh gl t pdll t pdlu t tsshd t tsshd t pts t pts t pdhl t pdhu pwm tri state band
AOZ5006 rev. 1.5 april 2012 www.aosmd.com page 10 of 16 figure 16. applying vdrv and generating boot supply important: if the disb# is used it is necessary to ensure proper coordination with soft start and enable features of the external pwm controller in the system. every time AOZ5006qi is disabled through disb# there will be no output an d the external co ntroller may enter into open loop and put out a pwm signal with maximum duty ratio possible. if the AOZ5006qi is re-enabled by taking dsbl# high, there will be extremely large inrush currents while the output voltage builds up again which may drive the system into current limit. there might be undesirable consequences such as inductor saturation, overloading of the input or even a catastrophic failure of the device. it is recommended that the pwm controller be disabled when AOZ5006qi is disabled or non operational because of uvlo. the pwm controller should always be enabled with a soft start to minimise stresses on the converter. in general it should be noted that AOZ5006qi is a combination of two mosfets with an unintelligent driver, all of which are optimized for switching at the highest efficiency. other than uvlo and thermal protection, it does not have any monitoring or protection functions built in. the pwm controller should be designed in to perform these functions under all possible operating and transient conditions. input voltage vin AOZ5006qi is rated to operate over a wide input range of 4.5v to 16v. as with any other synchronous buck converter, large pulse currents at high frequency and extremely high di/dt rates will be drawn by the module during normal operation. it is strongly recommended to bypass the input supply very close to package leads with x7r or x5r quality ceramic capacitors. the high side mosfet in AOZ5006qi is optimized for fast switching with low duty ratios. it has ultra low gate charges which have been achieved as a trade off with higher r ds(on) value. when the module is operated at low vin the duty ratio will be higher and conduction losses in the hs fet will also be correspondingly higher. this will be compensated to some extent by reduced switching losses. the total power loss in the module may appear to be low even though in reality the hs mosfet losses may be disproportionately high. since the two mosfets have their own exposed pads and pcb copper areas for heat dissipation, the hs fet may be much hotter than the ls fet. it is recommended that worst case junction temperature be measured and ensured to be within safe limits when the module is operated with high duty ratios. pwm input AOZ5006qi is offered in two versions which can be interfaced with pwm logic compatible with either 5v (ttl) or 3v (cmos). refer to figure 15 for the timing and propagation delays between the pwm input and the gate drives. the pwm is also a tri state compatible input. when the input is high impedance or unconnected both the gate drives will be off an d the gates are held active low. the pwm threshold table (table 1) lists the thresholds for high and low level transitions as well as tri state operation. as shown in figure 15, there is a hold off delay between the time pwm signal enters the tri state window and the corresponding gate drive is pulled low. +5v cgnd pgnd vin vdrv vcin pwm smod disb# thdn boot vin cboot rboot pgnd cgnd vswh AOZ5006 drive logic and dead time control
AOZ5006 rev. 1.5 april 2012 www.aosmd.com page 11 of 16 this delay is typically 170 ns and intended to prevent spurious triggering of the tri state mode which may be caused either by noise induced glitches in the pwm waveform or slow rise and fall times. table 1. pwm input and tri state thresholds note: see figure 15 for propagation delays and tri state window. diode mode emulation of low side mosfet (smod) AOZ5006qi can be operated in the diode emulation or skip mode using the smod pin. this is useful if the converter has to operate in asynchronous mode during start up, light load or under pre bias conditions. if smod is taken high, the controller will use the pwm signal as reference and generate both the high and low side complementary gate drive outputs with the minimal delays necessary to avoid cross conduction. when the pin is taken low the hs fet drive is not affected but diode emulation mode is activated for the ls fet. see table 2 for a comprehensive view of all logic inputs and corresponding drive conditions. table 2. control logic truth table note: diode emulation mode is activa ted when smod pin is held low. gate drives AOZ5006qi has an internal high current high speed driver that generates the floating gate drive for the hs fet and a complementary drive for the ls fet. propagation delays between transitions of the pwm waveform and corresponding gate drives are kept to the minimum. an internal shoot through protection scheme ensures that neither mosfet turns on while the other one is still conducting, thereb y preventing shoot through condition of the input current. when the pwm signal makes a transition from h ? l or l ? h, the corresponding gate drive gh or gl begins to turn off. the adaptive ti ming circuit monitors the falling edge of the gate voltage and when the level goes below 1v, the complementary gate driver is turned on. the dead time between the two switches is mi nimized, at the same time preventing cross conduction across the input bus. the adaptive circuit also monitors the switching node vswh and ensures that transition from one mosfet to another always takes place without cross conduction, even under transient and abnormal conditions of operation. the gate pins gh and gl are brought out on pins 6 and 36 respectively. however these connections are not made directly to mosfet gate pads and their voltage measurement may not reflect the actual gate voltage applied inside the package. the gate connections are primarily for functional tests during manufacturing and no connections should be made to them in the application. thermal shutdown the module temperature is internally sensed and an alarm is asserted if it exceeds 150c. the alarm is reset when the temperature cools down to 135c. the thdn is an open drain pin that is pulled to cgnd to indicate an overtemperature condition. it may be pulled up to vcin through a resistor for monitoring purposes. pcb layout guidelines AOZ5006 is a high current module rated for operation up to 1 mhz at 25a or higher. this requires extremely fast switching speeds to keep the switching losses and device temperatures within limits. having a robust gate driver integrated in the package helps to minimise the driver-to-mosfet gate pad connections without involving the parasitics of the package or pcb traces. while excellent switching speeds are achieved, correspondingly high levels of dv/dt and di/dt will be observed throughout the power train which requires careful attention to pcb layout to minimise voltage spikes and other transients. as with any synchronous buck converter layout the critical requirement is to minimise the area of the primary switching current loop, formed by the hs fet, ls fet and the input bypass capacitor c in . the pcb design is somewhat simplified because of the optimized pin out in AOZ5006qi. the bulk of vin and pgnd pins are located adjacent to each other and the input bypass capacitors should be placed as close as possible to t hese pins. the area of the secondary switching loop, formed by ls fet, output inductor and output capacitor c out is the next critical parameter. the ground plane should be extended and the negative pins of c out should be returned to it, again as close as possible to the device pins. while AOZ5006qi is extremely efficient it can still dissipate up to 6w of heat which requires attention to thermal design. mosfets in the package are directly attached to individual exposed pads to simplify thermal management. both vin and vswh pads should be thresholds ? v pwmh v pwml v trih v tril AOZ5006qi 3.9v 1.0v 1.3v 3.7v AOZ5006qi-01 2v 1v 1.3v 1.75v disb# smod pwm gh gl lxx l l hl h h l h l l l see note hhtri statel l hh h h l hh l l h
AOZ5006 rev. 1.5 april 2012 www.aosmd.com page 12 of 16 attached to large areas of pcb copper. thermal reliefs should be avoided to ensure proper heat dissipation to the board. an inner power plane layer dedicated to vin, typically the 12v system input, is desirable and vias should be provided near the device to connect the vin copper pour to the power plane. though ground does not form a part of any device tabs, significant amount of heat is dissipated though multiple pgnd pins. a large copper pour connected to pgnd pins and further to the system ground plane through vias will further improve thermal management of the system. figure 17 illustrates the vari ous copper pours and bypass capacitor locations. figure 17. pcb layout illustration for minimizing current loops
rev. 1.5 april 2012 www.aosmd.com page 13 of 16 AOZ5006 package dimensions, 6x6 qfn-40 ep3_s 11 21 1 31 20 30 40 11 21 1 31 20 30 10 40 seating plane c 40 x b d/2 d 2 index area (d/2xe/2) b a e e/2 2x pin#1 ida d1 d2 d1 a l1 l1 e e a3 e/2 l5 l5 l c0.30 x 45 top view side view bottom view 2x 4 c bbb m ab 3 notes: 1. all dimensions are in millimeters. 2. the location of the terminal #1 identifier and terminal numbering convention conforms to jedec publication 95 spp-002. 3. dimension b applies to metallized terminal and is measured between 0.20mm and 0.35mm from the terminal tip. if the terminal has the optional radius on the other end of the terminal, the dimension b should not be measured in that radius area. 4. coplanarity applies to the terminals and all other bottom surface metalization. ddd c aaa c 2x aaa c l2 e1 e1 e2 l6 l l3 l4 a1 a3 10 ccc c
rev. 1.5 april 2012 www.aosmd.com page 14 of 16 AOZ5006 package dimensions, 6x6 qfn-40 ep3_s (continued) dimensions in millimeters dimensions in inches symbols min. typ. max. symbols min. typ. max. l3 l2 l1 a a1 e d2 d1 bbb aaa l a3 b d e1 ccc ddd e e2 l4 l6 l5 0.73 l3 0.010 0.008 0.006 0.26 0.21 0.15 l2 0.010 0.008 0.006 0.25 0.20 0.15 l1 0.006 0.004 0.236 bsc 0.000 0.028 0.079 0.001 0.030 0.002 0.031 0.80 0.05 0.75 0.02 2.00 0.70 0.00 a a1 e d2 d1 6.00 bsc bbb aaa l a3 0.20 ref 0.35 0.25 0.20 b 0.008 0.008 ref 0.010 0.014 0.50 0.40 0.30 0.020 0.020 bsc 0.50 bsc d 6.00 bsc 0.236 bsc e1 ccc ddd 0.004 0.003 0.15 0.10 0.10 0.08 0.016 0.012 1.40 0.055 1.60 1.50 0.063 0.059 e 1.90 2.10 4.30 4.40 4.50 0.075 0.083 0.169 0.173 0.177 0.30x45 0.73 1.50 0.52 0.21 2.23 2.27 2.20 4.40 2.00 2.00 0.20 0.50 ref 0.37 0.55 0.54 unit: mm recommended land pattern 0.25 0.25 0.40 0.20 e2 2.17 0.085 2.37 2.27 0.093 0.089 0.83 0.63 0.54 l4 0.64 0.44 0.37 l6 0.47 0.27 0.032 0.028 0.024 0.025 0.021 0.017 0.019 0.015 0.011 2.87 2.87 2.87 2.87 0.75 0.40 l5 0.50 0.30 0.020 0.016 0.012
rev. 1.5 april 2012 www.aosmd.com page 15 of 16 AOZ5006 tape and reel dimensions, 6x6 qfn package qfn6x6 (16mm) a0 b0 k0 e e1 e2 d0 d1 p0 p1 p2 t 6.30 0.20 0.20 1.10 min. 1.50 1.50 0.3 16.0 0.10 1.75 0.1 7.5 0.20 12.00 0.20 4.00 0.10 2.00 0.05 0.30 v r g m k s n w n m ?100 ?330 max. +2.0 -0.0 16.4 16mm tape size v r --- --- s k min. 1.5 10.1 g --- h w1 ?13.0 +0.5 -0.2 22.4 h w w1 reel size ?330 unit: mm unit: mm min. d1 p1 p2 b0 k0 t a0 p0 d0 c feeding direction l min. max. 0.20 6.30 +0.1 -0.0 carrier tape reel leader/trailer and orientation trailer tape 300mm min. or 75 empty pockets components tape orientation in pocket leader tape 500mm min. or 125 empty pockets e e1 e2
AOZ5006 rev. 1.5 april 2012 www.aosmd.com page 16 of 16 part marking part number code assembly lot code fab code & assembly location year code & week code part number code assembly lot code fab code & assembly location year code & week code AOZ5006qi (6.0 x 6.0 qfn) AOZ5006qi-01 (6.0 x 6.0 qfn) z5006qi z5006qi1 as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. this datasheet contains preliminary data; supplementary data may be published at a later date. alpha & omega semiconductor reserves the right to make changes at any time without notice. life support policy alpha & omega semiconductor products ar e not authorized for use as critical components in life support devices or systems.

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